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IALL (Full Record)
ALL (Full Record)
IBIB (Indented Bibliographic Citation)
CBIB (Compressed Bibliographic Citation)
BIB (Bibliographic Citation)
IBIB ABS (Indented Bibliographic Citation)
CBIB ABS (Citation and Abstract)
BIB ABS (Citation and Abstract)
TI (Title)
SCAN (Sample Format in Random Order, Free)
SAM (Sample: Title Plus Indexing)

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IALL (Full Record)

=> d l16 2 iall noh

L16  ANSWER 2 OF 888  CA  COPYRIGHT 1996 ACS
ACCESSION NUMBER:        125:128883  CA
TITLE:                   Synthesis, characterization and immobilization
                         of nanocrystalline binary and ternary Group
                         III-V (13-15) compound semiconductors
AUTHOR(S):               Halaoui, L. I.; Kher, S. S.; Lube, M. S.;
                         Aubuchon, S. R.; Hagan, C. R.
CORPORATE SOURCE:        Dep. Chem., Duke Univ., Durham, NC, USA
SOURCE:                  Report (1995), DU/DC/TR-54; Order No.
                         AD-A302848, 24 pp.  Avail.: NTIS
                         From: Gov. Rep. Announce. Index (U. S.) 1996,
                         96(14), Abstr. No. 14-00,796
DOCUMENT TYPE:           Report
LANGUAGE:                English
CLASSIFICATION:          76-2 (Electric Phenomena)
                         Section cross-reference(s): 78
ABSTRACT:
Two synthetic routes to nanocryst. Group III-V (13-15) materials are
discussed.  The first employs dehalosilylation reactions between Group
III trihalides and E(SiMe3)3 (E = P, As) in hydrocarbon solvents
affording nanocryst. Group III-V semiconductors or their precursors.  The
second involves reactions of MX3 (M = Ga, X = Cl, I; M = In, X = Cl, I)
in glymes with in situ synthesized (Na/K)3E (E = P, As, Sb) in arom.
solvents, yielding nanocryst. GaP, GaAs, GaSb, InP, InAs and InSb after
refluxing reaction mixts.  Materials are characterized by TEM, XRD,
Elemental Anal., NMR, UV-vis, and STM.  STM images of InAs give particle
size distribution and confirm sample cond.  Scanning tunneling
spectroscopy shows a large bandgap for nanocryst. InAs than for InAs
wafer, consistent with quantum confinement.

SUPPL. TERM:       gallium phosphide nanocryst semiconductor prepn;
                   arsenide gallium nanocryst semiconductor prepn;
                   antimonide gallium nanocryst semiconductor prepn;
                   indium phosphide nanocryst semiconductor prepn; compd
                   semiconductor nanocryst prepn
INDEX TERM:        Semiconductor materials
                      (compd., Group III-V; synthesis and
                      characterization and immobilization of nanocryst.
                      binary and ternary Group III-V compd.
                      semiconductors)
INDEX TERM:        Crystallites
                      (nanocrystals, gallium phosphide and others;
                      synthesis and characterization and immobilization
                      of nanocryst. binary and ternary Group III-V compd.
                      semiconductors)
INDEX TERM:        1303-00-0P, Gallium arsenide (GaAs), preparation
                   1303-11-3P, Indium arsenide (InAs), preparation
                   1312-41-0P, Indium antimonide (InSb), preparation
                   12063-98-8P, Gallium phosphide (GaP), preparation
                   12064-03-8P, Gallium antimonide (GaSb)   22398-80-7P,
                   Indium phosphide (InP), preparation
                   ROLE: PNU (Preparation, unclassified); PREP
                   (Preparation)
                      (prepn. of; synthesis and characterization and
                      immobilization of nanocryst. binary and ternary
                      Group III-V compd. semiconductors)

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ALL (Full Record)

=> d l16 2 all noh

L16  ANSWER 2 OF 888  CA  COPYRIGHT 1996 ACS
AN   125:128883  CA
TI   Synthesis, characterization and immobilization of nanocrystalline
     binary and ternary Group III-V (13-15) compound semiconductors
AU   Halaoui, L. I.; Kher, S. S.; Lube, M. S.; Aubuchon, S. R.; Hagan, C.
     R.
CS   Dep. Chem., Duke Univ., Durham, NC, USA
SO   Report (1995), DU/DC/TR-54; Order No. AD-A302848, 24 pp.  Avail.:
     NTIS
     From: Gov. Rep. Announce. Index (U. S.) 1996, 96(14), Abstr. No.
     14-00,796
DT   Report
LA   English
CC   76-2 (Electric Phenomena)
     Section cross-reference(s): 78
AB   Two synthetic routes to nanocryst. Group III-V (13-15) materials are
     discussed.  The first employs dehalosilylation reactions between
     Group III trihalides and E(SiMe3)3 (E = P, As) in hydrocarbon
     solvents affording nanocryst. Group III-V semiconductors or their
     precursors.  The second involves reactions of MX3 (M = Ga, X = Cl,
     I; M = In, X = Cl, I) in glymes with in situ synthesized (Na/K)3E (E
     = P, As, Sb) in arom. solvents, yielding nanocryst. GaP, GaAs, GaSb,
     InP, InAs and InSb after refluxing reaction mixts.  Materials are
     characterized by TEM, XRD, Elemental Anal., NMR, UV-vis, and STM.
     STM images of InAs give particle size distribution and confirm
     sample cond.  Scanning tunneling spectroscopy shows a large bandgap
     for nanocryst. InAs than for InAs wafer, consistent with quantum
     confinement.
ST   gallium phosphide nanocryst semiconductor prepn; arsenide gallium
     nanocryst semiconductor prepn; antimonide gallium nanocryst
     semiconductor prepn; indium phosphide nanocryst semiconductor prepn;
     compd semiconductor nanocryst prepn
IT   Semiconductor materials
        (compd., Group III-V; synthesis and characterization and
        immobilization of nanocryst. binary and ternary Group III-V
        compd. semiconductors)
IT   Crystallites
        (nanocrystals, gallium phosphide and others; synthesis and
        characterization and immobilization of nanocryst. binary and
        ternary Group III-V compd. semiconductors)
IT   1303-00-0P, Gallium arsenide (GaAs), preparation   1303-11-3P,
     Indium arsenide (InAs), preparation   1312-41-0P, Indium antimonide
     (InSb), preparation   12063-98-8P, Gallium phosphide (GaP),
     preparation   12064-03-8P, Gallium antimonide (GaSb)   22398-80-7P,
     Indium phosphide (InP), preparation
     RL: PNU (Preparation, unclassified); PREP (Preparation)
        (prepn. of; synthesis and characterization and immobilization of
        nanocryst. binary and ternary Group III-V compd. semiconductors)

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IBIB (Indented bibliographic citation)

=> d ibib noh 2

L16  ANSWER 2 OF 888  CA  COPYRIGHT 1996 ACS
ACCESSION NUMBER:        125:128883  CA
TITLE:                   Synthesis, characterization and immobilization
                         of nanocrystalline binary and ternary Group
                         III-V (13-15) compound semiconductors
AUTHOR(S):               Halaoui, L. I.; Kher, S. S.; Lube, M. S.;
                         Aubuchon, S. R.; Hagan, C. R.
CORPORATE SOURCE:        Dep. Chem., Duke Univ., Durham, NC, USA
SOURCE:                  Report (1995), DU/DC/TR-54; Order No.
                         AD-A302848, 24 pp.  Avail.: NTIS
                         From: Gov. Rep. Announce. Index (U. S.) 1996,
                         96(14), Abstr. No. 14-00,796
DOCUMENT TYPE:           Report
LANGUAGE:                English

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CBIB (Compressed bibliographic citation)

=> d cbib noh 2

L16  ANSWER 2 OF 888  CA  COPYRIGHT 1996 ACS
125:128883  Synthesis, characterization and immobilization of
     nanocrystalline binary and ternary Group III-V (13-15) compound
     semiconductors.  Halaoui, L. I.; Kher, S. S.; Lube, M. S.; Aubuchon,
     S. R.; Hagan, C. R. (Dep. Chem., Duke Univ., Durham, NC, USA).
     Report, DU/DC/TR-54; Order No. AD-A302848, 24 pp.  Avail. NTIS
     From: Gov. Rep. Announce. Index (U. S.) 1996, 96(14), Abstr. No.
     14-00,796 (English) 1995.

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BIB (Bibliographic citation)

=> d bib noh 2

L16  ANSWER 2 OF 888  CA  COPYRIGHT 1996 ACS
AN   125:128883  CA
TI   Synthesis, characterization and immobilization of nanocrystalline
     binary and ternary Group III-V (13-15) compound semiconductors
AU   Halaoui, L. I.; Kher, S. S.; Lube, M. S.; Aubuchon, S. R.; Hagan, C.
     R.
CS   Dep. Chem., Duke Univ., Durham, NC, USA
SO   Report (1995), DU/DC/TR-54; Order No. AD-A302848, 24 pp.  Avail.:
     NTIS
     From: Gov. Rep. Announce. Index (U. S.) 1996, 96(14), Abstr. No.
     14-00,796
DT   Report
LA   English

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IBIB ABS (Indented Bibliographic Abstract Text)

=> d ibib abs noh 2

L16  ANSWER 2 OF 888  CA  COPYRIGHT 1996 ACS
ACCESSION NUMBER:        125:128883  CA
TITLE:                   Synthesis, characterization and immobilization
                         of nanocrystalline binary and ternary Group
                         III-V (13-15) compound semiconductors
AUTHOR(S):               Halaoui, L. I.; Kher, S. S.; Lube, M. S.;
                         Aubuchon, S. R.; Hagan, C. R.
CORPORATE SOURCE:        Dep. Chem., Duke Univ., Durham, NC, USA
SOURCE:                  Report (1995), DU/DC/TR-54; Order No.
                         AD-A302848, 24 pp.  Avail.: NTIS
                         From: Gov. Rep. Announce. Index (U. S.) 1996,
                         96(14), Abstr. No. 14-00,796
DOCUMENT TYPE:           Report
LANGUAGE:                English
AB   Two synthetic routes to nanocryst. Group III-V (13-15) materials are
     discussed.  The first employs dehalosilylation reactions between
     Group III trihalides and E(SiMe3)3 (E = P, As) in hydrocarbon
     solvents affording nanocryst. Group III-V semiconductors or their
     precursors.  The second involves reactions of MX3 (M = Ga, X = Cl,
     I; M = In, X = Cl, I) in glymes with in situ synthesized (Na/K)3E (E
     = P, As, Sb) in arom. solvents, yielding nanocryst. GaP, GaAs, GaSb,
     InP, InAs and InSb after refluxing reaction mixts.  Materials are
     characterized by TEM, XRD, Elemental Anal., NMR, UV-vis, and STM.
     STM images of InAs give particle size distribution and confirm
     sample cond.  Scanning tunneling spectroscopy shows a large bandgap
     for nanocryst. InAs than for InAs wafer, consistent with quantum
     confinement.

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CBIB ABS (Compressed citation and abstract)

Note: You can also use bib abs or ibib abs

=> d cbib abs noh 2

L16  ANSWER 2 OF 888  CA  COPYRIGHT 1996 ACS
125:128883  Synthesis, characterization and immobilization of
     nanocrystalline binary and ternary Group III-V (13-15) compound
     semiconductors.  Halaoui, L. I.; Kher, S. S.; Lube, M. S.; Aubuchon,
     S. R.; Hagan, C. R. (Dep. Chem., Duke Univ., Durham, NC, USA).
     Report, DU/DC/TR-54; Order No. AD-A302848, 24 pp.  Avail. NTIS
     From: Gov. Rep. Announce. Index (U. S.) 1996, 96(14), Abstr. No.
     14-00,796 (English) 1995.
AB   Two synthetic routes to nanocryst. Group III-V (13-15) materials are
     discussed.  The first employs dehalosilylation reactions between
     Group III trihalides and E(SiMe3)3 (E = P, As) in hydrocarbon
     solvents affording nanocryst. Group III-V semiconductors or their
     precursors.  The second involves reactions of MX3 (M = Ga, X = Cl,
     I; M = In, X = Cl, I) in glymes with in situ synthesized (Na/K)3E (E
     = P, As, Sb) in arom. solvents, yielding nanocryst. GaP, GaAs, GaSb,
     InP, InAs and InSb after refluxing reaction mixts.  Materials are
     characterized by TEM, XRD, Elemental Anal., NMR, UV-vis, and STM.
     STM images of InAs give particle size distribution and confirm
     sample cond.  Scanning tunneling spectroscopy shows a large bandgap
     for nanocryst. InAs than for InAs wafer, consistent with quantum
     confinement.

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BIB ABS (Bibliographic Abstract citation)

=> d bib abs noh 2

L16  ANSWER 2 OF 888  CA  COPYRIGHT 1996 ACS
AN   125:128883  CA
TI   Synthesis, characterization and immobilization of nanocrystalline
     binary and ternary Group III-V (13-15) compound semiconductors
AU   Halaoui, L. I.; Kher, S. S.; Lube, M. S.; Aubuchon, S. R.; Hagan, C.
     R.
CS   Dep. Chem., Duke Univ., Durham, NC, USA
SO   Report (1995), DU/DC/TR-54; Order No. AD-A302848, 24 pp.  Avail.:
     NTIS
     From: Gov. Rep. Announce. Index (U. S.) 1996, 96(14), Abstr. No.
     14-00,796
DT   Report
LA   English
AB   Two synthetic routes to nanocryst. Group III-V (13-15) materials are
     discussed.  The first employs dehalosilylation reactions between
     Group III trihalides and E(SiMe3)3 (E = P, As) in hydrocarbon
     solvents affording nanocryst. Group III-V semiconductors or their
     precursors.  The second involves reactions of MX3 (M = Ga, X = Cl,
     I; M = In, X = Cl, I) in glymes with in situ synthesized (Na/K)3E (E
     = P, As, Sb) in arom. solvents, yielding nanocryst. GaP, GaAs, GaSb,
     InP, InAs and InSb after refluxing reaction mixts.  Materials are
     characterized by TEM, XRD, Elemental Anal., NMR, UV-vis, and STM.
     STM images of InAs give particle size distribution and confirm
     sample cond.  Scanning tunneling spectroscopy shows a large bandgap
     for nanocryst. InAs than for InAs wafer, consistent with quantum
     confinement.

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TI (Title)

=> d ti noh 2

L16  ANSWER 2 OF 888  CA  COPYRIGHT 1996 ACS
TI   Synthesis, characterization and immobilization of nanocrystalline
     binary and ternary Group III-V (13-15) compound semiconductors

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SAM (Sample, title plus indexing)

=> d sam noh 2

L16  ANSWER 2 OF 888  CA  COPYRIGHT 1996 ACS
CC   76-2 (Electric Phenomena)
     Section cross-reference(s): 78
TI   Synthesis, characterization and immobilization of nanocrystalline
     binary and ternary Group III-V (13-15) compound semiconductors
ST   gallium phosphide nanocryst semiconductor prepn; arsenide gallium
     nanocryst semiconductor prepn; antimonide gallium nanocryst
     semiconductor prepn; indium phosphide nanocryst semiconductor prepn;
     compd semiconductor nanocryst prepn
IT   Semiconductor materials
        (compd., Group III-V; synthesis and characterization and
        immobilization of nanocryst. binary and ternary Group III-V
        compd. semiconductors)
IT   Crystallites
        (nanocrystals, gallium phosphide and others; synthesis and
        characterization and immobilization of nanocryst. binary and
        ternary Group III-V compd. semiconductors)
IT   1303-00-0P, Gallium arsenide (GaAs), preparation   1303-11-3P,
     Indium arsenide (InAs), preparation   1312-41-0P, Indium antimonide
     (InSb), preparation   12063-98-8P, Gallium phosphide (GaP),
     preparation   12064-03-8P, Gallium antimonide (GaSb)   22398-80-7P,
     Indium phosphide (InP), preparation
     RL: PNU (Preparation, unclassified); PREP (Preparation)
        (prepn. of; synthesis and characterization and immobilization of
        nanocryst. binary and ternary Group III-V compd. semiconductors)

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SCAN (Sample format in random order, free)

=> d scan

L16   888 ANSWERS   CA  COPYRIGHT 1996 ACS
CC   57-2 (Ceramics)
TI   Characterization of agglomerate strength of coprecipitated superfine
     zirconia powders
ST   zirconia powder compaction agglomerate strength
IT   Agglomeration
     Compaction
        (characterization of agglomerate strength of copptd. compacted
        superfine zirconia powders)
IT   1314-23-4, Zirconia, properties
     RL: PRP (Properties); TEM (Technical or engineered material use);
     USES (Uses)
        (characterization of agglomerate strength of copptd. compacted
        superfine zirconia powders)

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L16   888 ANSWERS   CA  COPYRIGHT 1996 ACS
CC   72-2 (Electrochemistry)
     Section cross-reference(s): 66, 73
TI   Application of scanning tunneling microscopy to studies of electrode
     surfaces
ST   scanning tunneling microscopy electrode surface study
IT   Electrodes
        (application of scanning tunneling microscopy to studies of
        electrode surfaces)
IT   Microscopy, electron
        (scanning tunneling, application of scanning tunneling microscopy
        to studies of electrode surfaces)

L16   888 ANSWERS   CA  COPYRIGHT 1996 ACS
CC   65-6 (General Physical Chemistry)
TI   Atomic-scale friction measurements using friction force microscopy:
     part 1--General principles and new measurement techniques
ST   friction force microscopy microfriction; force friction FFM
     microscopy
IT   Friction
        (general principles and new measurement techniques in at.-scale
        friction measurements using friction force microscopy)
IT   Microscopy
        (at. force, general principles and new measurement techniques in
        at.-scale friction measurements using friction force microscopy)
IT   Force
        (frictional, general principles and new measurement techniques in
        at.-scale friction measurements using friction force microscopy)

L16   888 ANSWERS   CA  COPYRIGHT 1996 ACS
CC   57-1 (Ceramics)
TI   Crystallizatin of   ***nanocomposite***   glasses made by the SSG
     process
ST   crystn   ***nanocomposite***   glass; glass ceramic
     ***nanocomposite***   crystn epitaxy; epitaxy   ***nanocomposite***
     glass crystn
IT   Epitaxy
        (glass-ceramic crystal phase growth by, in sol-gel-derived films)
IT   Glass ceramics
        (prepn. of, by epitaxial crystal phase growth in sol-gel-derived
        films)
IT   Coating process
        (sol-gel, glass coatings prepd. by, epitaxial crystn. of)
IT   12026-13-0, Aluminum silicon strontium oxide (Al2Si2SrO8)
     37342-39-5, Aluminum calcium silicate (Al2CaSi2O8)
     RL: USES (Uses)
        (crystn. agent, in prepn. of orthoclase-type glass-ceramic from
        multiphasic gel)
IT   12003-55-3, Aluminum sodium silicate (AlNaSi3O8)   12168-80-8,
     Aluminum potassium silicate (AlKSi3O8)   12244-10-9, Albite
     12251-44-4, Orthoclase
     RL: USES (Uses)
        (glass-ceramics, prepn. of   ***nanocomposite***  , by crystn. of
        sol-gel-derived film)
IT   12060-59-2P, Strontium titanium oxide (SrTiO3)   12251-19-3P,
     Aluminum barium silicon oxide (Al2BaSi2O8)   13463-67-7P, Titania,
     preparation
     RL: SPN (Synthetic preparation); PREP (Preparation)
        (prepn. of   ***nanocomposite***  , by crystn. of sol-gel-derived
        film)

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BIB ABS (Bibliographic Abstract citation)

TI (Title)

SAM (Sample, title plus indexing)

SCAN (Sample format in random order, free)

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